1999. 11. 30 1/2 semiconductor technical data MPSA62/63/64 epitaxial planar pnp transistor revision no : 3 general purpose application. darlington transistor. features complementary to mpsa13/14. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage MPSA62 v cbo -20 v mpsa63/64 -30 collector-emitter voltage MPSA62 v ces -20 v mpsa63/64 -30 emitter-base voltage v ebo -10 v collector current i c -500 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector-emitter breakdown voltage MPSA62 v (br)ces i c =-0.1ma, i b =0 -20 - - v mpsa63/64 -30 - - collector cut-off current MPSA62 i cbo v cb =-15v, i e =0 - - -0.1 a mpsa63/64 v cb =-30v, i e =0 emitter cut-off current i ebo v eb =-10v, i c =0 - - -0.1 a dc current gain MPSA62 h fe i c =-10ma, v ce =-5v 20,000 - - mpsa63 5,000 - - mpsa64 10,000 - - mpsa63 i c =-100ma, v ce =-5v 10,000 - - mpsa64 20,000 - - collector-emitter saturation voltage MPSA62 v ce(sat) i c =-10ma, i b =-0.01ma - - -1.0 v mpsa63/64 i c =-100ma, i b =-0.1ma - - -1.5 base emitter voltage MPSA62 v be i c =-10ma, v ce =-5v - - -1.4 v mpsa63/64 i c =-100ma, v ce =-5v - - -2.0 current gain bandwith product mpsa63/64 f t i c =-10ma, f=100mhz, v ce =-5v 125 - - mhz *pulse test : pulse width # 300 s, duty cycle # 2%
1999. 11. 30 2/2 MPSA62/63/64 revision no : 3 current gain bandwidth product 1 t -30 -10 -3 -1 collector current i (ma) c f - i h - i c collector current i (ma) -1 -3 -10 -30 fe 1k dc current gain h be base emitter voltage v (v) collector current i (ma) 0 c -1 v - i collector current i (ma) saturation voltage be(sat) c v , v - i fe c -100 -300 -1k 3k 5k 10k 30k 50k 100k 300k 500k 1000k v =-5v ce t c f (mhz) -100 -300 -1k 3 5 10 30 50 100 300 500 1k v =-5v ce be(sat) c v , v (v) v -0.01 -1 -3 -1 -3 -5 -10 -0.1 -0.3 -0.5 -0.05 -0.03 be(sat) -10 -30 -100 -1k -300 ce(sat) ce(sat) ce(sat) v c i /i =1000 b be(on) c -0.4 -0.8 -1.2 -1.6 -2.2 -2.6 -3 -5 -10 -30 -50 -100 -200 v =-5v ce
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